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The BC847B-7-F is an NPN small-signal transistor manufactured by Diodes Incorporated, housed in a SOT23 plastic package. It features a collector-emitter breakdown voltage of 45 V and a continuous collector current rating of 100 mA. The device exhibits a DC current gain (hFE) range of 200 to 450 at IC = 2.0 mA and VCE = 5 V. Electrical characteristics include a transition frequency of 100 MHz and a power dissipation capacity of 310 mW under standard conditions.
Verify the specific ordering suffix matches the required reel size and packing quantity. Confirm that the component marking code aligns with the intended BJT gain bin. Ensure compliance with environmental directives such as RoHS 3 and REACH requirements before finalizing procurement specifications.
Select this part when a 45 V collector-emitter voltage rating is required alongside a high DC current gain between 200 and 450. It serves as the NPN complement to the BC857B PNP transistor within the same series. Consider thermal derating curves if operating near maximum power dissipation limits in confined spaces.
This component belongs to the BC846A–BC848C series of NPN small-signal transistors. The 'B' designation indicates a specific DC current gain binning category. The '-7-F' suffix denotes the specific tape and reel packaging format used for surface mount assembly processes.
Compatible substitutes include other manufacturers' BC847B variants in the SOT23 package. Verify pinout compatibility and ensure equivalent electrical ratings for collector-base voltage and current gain ranges are met.
The collector-emitter breakdown voltage (BVCEO) is specified as 45 V.
Yes, the complementary PNP types are the BC856A–BC858C series.
The DC current gain (hFE) ranges from 200 to 450 when measured at IC = 2.0 mA and VCE = 5 V.