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The BC847B-AU_R1_000A1 is a silicon NPN general-purpose bipolar junction transistor manufactured by Panjit International Inc. It is housed in an SOT-23-3 surface-mount package and holds AEC-Q101 qualification for automotive reliability. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 6 V. The device supports a continuous DC collector current of 100 mA with a power dissipation capacity of 330 mW. Its DC current gain (hFE) ranges from a minimum of 200 to a maximum of 450. Operating temperatures span from -55°C to +150°C.
Verify the specific suffix AU_R1_000A1 against official Panjit documentation to confirm exact reel specifications and manufacturing origin. Ensure compatibility with standard SMD reflow soldering profiles. Confirm RoHS compliance status through the manufacturer's latest environmental declaration. Validate that the AEC-Q101 certification remains active for this specific production lot before integration into automotive supply chains.
Select this component when a single NPN transistor with moderate voltage handling and high gain is required in a small footprint. The AEC-Q101 rating makes it appropriate for automotive environments where standard commercial grade parts may be insufficient. Consider the 100 mA current limit and 330 mW thermal dissipation constraints during circuit design to ensure reliable operation within the specified temperature range.
This part belongs to the BC847 series of small-signal transistors produced by Panjit. It serves as a surface-mount alternative to traditional through-hole variants, facilitating automated assembly processes. The B suffix indicates a specific binning of current gain characteristics, distinguishing it from other gain grades within the broader BC847 family.
BC847B_AU_R1_000A1