BC847B-QR

Overview

The BC847B-QR is an NPN general-purpose bipolar junction transistor manufactured by Nexperia. It is designed for surface-mount applications in the TO-236AB (SOT-23) package. The device features a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. It offers a DC current gain range of 200 to 450 at 2 mA and 5 V. The component supports a power dissipation of 250 mW and operates within a temperature range of -65 °C to +150 °C. It is qualified under AEC-Q101 standards.

Feature Summary

• AEC-Q101 automotive qualification for enhanced reliability
• High DC current gain selection for precise amplification
• Compact SMD plastic package design

Applications

• General-purpose switching circuits
• Signal amplification stages
• Automotive electronic systems

Procurement Notes

Verify the specific suffix 'QR' against official Nexperia documentation to confirm reel packaging specifications and tape-and-reel dimensions. Ensure the selected variant meets all required automotive quality standards and environmental compliance regulations before finalizing procurement decisions.

Selection Notes

Select this component when high current gain consistency is required for signal processing tasks. The AEC-Q101 qualification makes it suitable for automotive environments where long-term stability and thermal resilience are critical design constraints.

Part Context

This part belongs to the BC847 series of NPN transistors, which provides complementary PNP devices like the BC857. The 'Q' designation indicates automotive-grade qualification, while the 'B' specifies the medium-gain binning configuration for consistent performance across production batches.

Replacement Considerations

Direct substitutes include other AEC-Q101 qualified NPN transistors in the TO-236AB package with matching voltage and gain characteristics. Verify pinout compatibility and thermal resistance values before implementation.