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The BC847BHE3-TP is an NPN silicon bipolar junction transistor manufactured by Micro Commercial Components. It features a single configuration housed in a SOT-23-3 surface-mount package. Key electrical ratings include a maximum collector-emitter voltage of 65V, a collector-base voltage of 80V, and an emitter-base voltage of 6V. The device supports a continuous DC collector current of 100mA with a power dissipation capacity of 225mW. Additional specifications list a collector-emitter saturation voltage of 500mV and a transition frequency of 100MHz.
Verify the specific HE3 suffix against official Micro Commercial Components documentation to confirm lead-free compliance status. Ensure the ordering part number matches the required voltage and current ratings for the target design. Cross-reference datasheet revisions to confirm pinout consistency before finalizing procurement plans.
Select this component when a standard NPN transistor with 65V collector-emitter breakdown is required in a small surface-mount form factor. The 100mA current rating suits low-power discrete applications. Confirm that the thermal performance of the SOT-23-3 package aligns with the expected power dissipation limits in the final enclosure design.
This part belongs to the BC847 series of general-purpose NPN transistors produced by Micro Commercial Components. The HE3 designation typically indicates a lead-free manufacturing process compliant with international environmental directives. The device serves as a common replacement for legacy BJT components in modern consumer electronics and industrial control modules.
Direct substitutes include the BC847B-TP and BC846BHE3-TP from the same manufacturer. Verify that alternative parts maintain identical pin configurations and meet or exceed the 65V Vceo requirement.