BC847BLP-7

BC847BLP-7

$0.36
  • Description:TRANS NPN 45V 0.1A X1-DFN1006-3
  • Series:-

SKU:62c3d244081f Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 45V 0.1A X1-DFN1006-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:250 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:3-UFDFN
  • Supplier Device Package:X1-DFN1006-3
  • Grade:-
  • Qualification:-

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BC847BLP-7

Overview

The BC847BLP-7 is a small-signal NPN bipolar junction transistor manufactured by Diodes Incorporated. It features a collector-emitter breakdown voltage (BVCEO) of 45V and a maximum continuous collector current (IC) of 100mA. The device operates within a temperature range of -55°C to +150°C. It utilizes the X1-DFN1006-3 package, which provides a footprint of 0.60mm² and a height of 0.5mm. Electrical characteristics include a DC current gain (hFE) ranging from 200 to 450 at IC=2.0mA, and a transition frequency (fT) of 100MHz.

Feature Summary

  • High power dissipation capability up to 1000mW when mounted on an exposed copper pad.
  • Compact X1-DFN1006-3 package with a significantly reduced footprint compared to traditional SOT-23 packages.
  • Low profile design with a package height of 0.5mm to minimize off-board space requirements.
  • Compliant with RoHS standards and free from halogen and antimony.

Applications

  • General-purpose switching applications
  • Small-signal amplification circuits
  • Automotive electronics requiring high reliability

Procurement Notes

Verify that the specific ordering suffix matches the required packing quantity, as the standard reel contains 3,000 units while the 'B' variant contains 10,000 units. Confirm compliance with automotive quality standards if the application requires AEC-Q qualification, as this standard part does not inherently possess those certifications. Ensure the PCB layout accommodates the exposed collector pad for optimal thermal performance.

Selection Notes

Select this component when a low-profile surface-mount solution is required for high-density designs. The X1-DFN1006-3 package offers superior thermal dissipation compared to standard plastic packages when properly soldered to a copper heat sink. Consider the complementary BC857BLP for PNP requirements in push-pull configurations.

Part Context

This device belongs to the BC847 series of NPN silicon transistors designed for general-purpose use. It serves as a compact alternative to larger leaded or standard surface-mount packages, offering similar electrical performance in a much smaller physical envelope suitable for modern miniaturized electronic devices.

Replacement Considerations

The datasheet identifies the BC857BLP as the complementary PNP type. Standard BC847 variants in different packages may serve as functional replacements if board space allows, though thermal characteristics will differ significantly.

FAQ

What is the maximum power dissipation of the BC847BLP?

The maximum power dissipation is 400mW under standard still-air conditions, but it increases to 1000mW when the exposed collector pad is mounted on a 25mm x 25mm 2oz copper pad.

Is this component qualified for automotive applications?

No, this specific part number is not qualified to AEC-Q standards. Automotive-grade versions with a Q-suffix are available separately.

What is the ESD rating for this transistor?

The device has an Electrostatic Discharge Human Body Model (HBM) rating of 4,000V and a Machine Model (MM) rating of 200V.

BC847BLP-7BC847BLP-7
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