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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A X1-DFN1006-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：250 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：3-UFDFN
- Supplier Device Package：X1-DFN1006-3
- Grade：-
- Qualification：-
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Overview
The BC847BLP-7B is a small-signal NPN silicon transistor in an X1-DFN1006-3 package. It features a collector-emitter breakdown voltage of 45V and a continuous collector current of 100mA. The device offers high power dissipation up to 1000mW with an exposed pad on a large copper area, or 400mW on standard layouts. DC current gain ranges from 200 to 450 at 2mA. Transition frequency is 100MHz. Operating temperature spans -55°C to +150°C.
Feature Summary
- High power dissipation capability reaching 1000mW when mounted on a 25mm x 25mm copper heat sink.
- Extremely compact footprint of 0.60mm², significantly reducing board space compared to traditional packages.
- Low profile construction with a maximum height of 0.5mm for minimized off-board vertical clearance.
- Robust electrostatic discharge protection rated at 4000V under the human body model.
Applications
- General-purpose switching applications
- Linear amplification circuits
- Driver stages for low-power loads
Procurement Notes
Verify the specific ordering suffix '-7B' corresponds to the 10,000-unit reel quantity as defined in the manufacturer's documentation. Confirm that the X1-DFN1006-3 package dimensions align with the target PCB land pattern. Ensure thermal management strategies account for the required copper area to achieve the specified power dissipation ratings.
Selection Notes
Select this component when board real estate is constrained due to its minimal physical footprint. Consider the BC847BLP for designs requiring higher power handling than standard SOT-23 devices while maintaining a low profile. Verify that the 45V collector-emitter rating meets the circuit's maximum voltage requirements.
Part Context
This part belongs to the BC847 series of NPN transistors manufactured by Diodes Incorporated. It serves as the complementary counterpart to the BC857BLP PNP device. The product line utilizes advanced packaging technologies to deliver performance metrics suitable for modern consumer electronics and industrial control systems.
Replacement Considerations
Direct pin-compatible replacements include the BC847BLP-7 (identical electricals, different packing quantity). Cross-package alternatives like the BC847BT require careful evaluation of thermal resistance and physical envelope constraints.
