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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A X2-DFN1006-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：250 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：3-XFDFN
- Supplier Device Package：X2-DFN1006-3
- Grade：-
- Qualification：-
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Overview
The BC847BLP4-7 is a single NPN small-signal transistor manufactured by Diodes Incorporated, housed in an X2-DFN1006-3 package. It features a collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 100 mA. The device offers a DC current gain (hFE) ranging from 200 to 450 at IC = 2 mA. Power dissipation reaches 1000 mW with an exposed pad on a large copper area, while thermal resistance (RθJA) is 120 °C/W under those conditions. The transition frequency (fT) is 100 MHz.
Feature Summary
- High power dissipation capability up to 1000 mW when utilizing the exposed collector pad for thermal management.
- Extremely compact footprint measuring 0.60 mm², significantly reducing board space compared to traditional SOT-23 packages.
- Low profile construction with a maximum height of 0.4 mm to minimize off-board component height.
- Qualified to JEDEC standards for high reliability applications.
Applications
- General-purpose switching circuits
- Amplification stages in low-power electronics
- Automotive electronic systems
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation before procurement. The -7 suffix indicates a 3,000-unit reel size, which is listed as obsolete in the provided datasheet; confirm current availability status directly with the supplier or manufacturer to ensure supply continuity.
Selection Notes
Select this component when a compact NPN transistor with high power handling is required. Ensure the PCB layout includes an exposed copper pour connected to the collector pad to achieve the rated 1000 mW dissipation. Verify that the 45 V breakdown voltage meets the circuit requirements.
Part Context
This part belongs to the BC847B series of general-purpose NPN transistors. It serves as the complementary counterpart to the BC857BLP4 PNP transistor. The X2-DFN1006-3 package provides a smaller alternative to standard surface-mount packages while maintaining robust electrical performance.
Replacement Considerations
BC847BLP4Q is the automotive-compliant version of this component available from the same manufacturer.
FAQ
What is the minimum recommended pad layout for optimal thermal performance?
Optimal thermal performance requires mounting the exposed collector pad on a 25mm x 25mm 2oz copper area on a single-sided 1.6mm FR4 PCB.
Is this component lead-free and compliant with RoHS directives?
Yes, the device is totally lead-free, fully RoHS compliant, and halogen and antimony free.
What is the ESD rating for this transistor?
The device has an Electrostatic Discharge Human Body Model (HBM) rating of 4,000 V (JEDEC Class 3A).
