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The BC847BM,315 is a single NPN general-purpose bipolar junction transistor manufactured by Nexperia. It is housed in the SOT-883 (DFN1006B-3) surface-mount package with dimensions of 1.02 x 0.62 x 0.5 mm. Key electrical ratings include a maximum collector-emitter voltage (Vceo) of 45 V, a maximum collector-base voltage (VCBO) of 50 V, and a maximum emitter-base voltage (VEBO) of 6 V. The device supports a maximum DC collector current of 100 mA and a power dissipation of 250 mW at 25°C. It features a transition frequency (fT) of 100 MHz and operates within a temperature range of -65°C to +150°C.
Verify the specific gain bin 'M' against design requirements, as it denotes a tighter hFE range than standard variants. Confirm the SOT-883 footprint compatibility during PCB layout. Check RoHS compliance status on the latest datasheet revision. Ensure thermal management accounts for the 250 mW dissipation limit in the small package.
Select this part when board space is limited and high current gain is needed. The M variant offers higher hFE than A or B types. Compare against BC847AMB if different gain bins are required. Consider the SOT-883 package advantages over traditional SOT-23 for miniaturization.
This component belongs to the Nexperia BC847 family of NPN general-purpose transistors. The BC847BM specifically utilizes the SOT-883 (DFN1006B-3) package, which is smaller than the standard SOT-23. It serves as a compact alternative for applications requiring reliable NPN switching with moderate voltage ratings.
Direct pin-compatible replacements include other BC847 variants in SOT-883 packages, such as BC847AM,315 or BC847CM,315, provided the gain bin matches the circuit design. Verify that substitute parts maintain the same 45V Vceo rating and 100mA Ic capability.