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The BC847BMTF is an NPN epitaxial silicon transistor from the BC846/BC847/BC848/BC850 series, manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 100 mA. The device utilizes a SOT-23 surface-mount package with a maximum power dissipation of 310 mW. The 'B' suffix indicates a DC current gain (hFE) classification range of 200 to 450 at IC = 2 mA. It is supplied in tape and reel packaging for automated insertion.
Verify that the ordering suffix matches the required specifications: 'M' denotes the SOT-23 package, while 'TF' confirms tape and reel packing. Ensure the 'B' suffix aligns with the necessary hFE gain range of 200 to 450. Confirm compliance with RoHS directives and check for automotive qualification if applicable to the specific project requirements.
Select this component when a low-voltage NPN transistor with moderate current handling is required. The BC847B variant offers higher current gain than the standard BC847A, making it suitable for amplification stages requiring greater sensitivity. Consider the thermal resistance and power dissipation limits relative to the PCB land pattern size during layout.
This part belongs to the BC846/BC847/BC848/BC850 family of general-purpose NPN transistors. These devices are designed as complements to the BC856 through BC860 PNP series. They share common electrical characteristics but differ in breakdown voltages and gain classifications, allowing for flexible design configurations in portable equipment.
Direct substitutes include BC847AMTF or BC847CMTF from the same manufacturer, depending on the required hFE gain bin. Cross-manufacturer equivalents such as the 2N3904 may be considered if pinout compatibility and package constraints allow.