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The Diotec Semiconductor BC847BP is a general-purpose NPN bipolar junction transistor housed in a DFN1006-3 (SOT-883) surface-mount package. It features a collector-emitter voltage of 45 V, a continuous collector current of 100 mA, and a peak collector current of 200 mA. The device provides a DC current gain ranging from 200 to 450 at 2 mA. Maximum power dissipation is rated at 150 mW, with an operating junction temperature range spanning -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm compliance status. Standard versions are commercial/industrial grade, while suffixes like -Q or -AQ indicate AEC-Q101 automotive qualification. Confirm package type matches project requirements as this model utilizes the DFN1006-3 footprint. Ensure thermal management aligns with the specified 150 mW dissipation limit under intended load conditions.
Select this component for designs requiring a low-profile NPN transistor with high current gain in a small footprint. The DFN1006-3 package offers space efficiency compared to traditional SOT-23 variants. Consider the 45 V collector-emitter rating when designing for higher voltage environments where alternative models may be necessary. Evaluate thermal resistance characteristics relative to the copper pad area on the printed circuit board.
This part belongs to the BC846P through BC848P series of universal NPN transistors manufactured by Diotec Semiconductor. The series shares common mechanical and electrical characteristics, differentiated primarily by their maximum voltage ratings. The BC847BP specifically bridges the gap between lower and higher voltage options within this miniature package family.
BC846BP and BC848BP are members of the same series but possess different voltage ratings. Verify voltage requirements before substitution. Complementary PNP transistors are available within the same product line.