SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC847BQ-7-F is a general-purpose NPN bipolar junction transistor manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an SOT-23 surface-mount package. The device supports a maximum DC collector current of 100 mA and operates with a collector-emitter voltage of 45 V and a collector-base voltage of 50 V. Key electrical characteristics include a minimum DC current gain (hFE) of 200, a transition frequency (fT) of 300 MHz, and a power dissipation rating of 310 mW. The component functions reliably within an operating temperature range from -65 °C to +150 °C.
Verify the specific suffix 'Q' against official Diodes Incorporated documentation to confirm automotive qualification status and AEC-Q101 compliance. Ensure the ordering part number matches the required package type and tape-and-reel specifications. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement orders.
Select this component when high-speed performance and automotive reliability are required in a compact SOT-23 footprint. The 300 MHz fT distinguishes it from standard variants like the BC847BT-7-F. Verify that the 310 mW power dissipation meets thermal requirements and that the 100 mA current limit suits the load conditions.
This part belongs to the BC847 series of small-signal transistors produced by Diodes Incorporated. While sharing similar voltage and current ratings with other series members, the BC847BQ variant specifically targets automotive markets through its enhanced reliability features and packaging configuration.
BC847BT-7-F offers identical voltage and current ratings but lacks automotive qualification and has lower speed (100 MHz). BC847C-7-F provides higher gain but shares the same package and basic electrical limits.