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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A SST3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：350 mW
- Frequency - Transition：200MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SST3
- Grade：-
- Qualification：-
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Overview
The BC847BT116 is a general-purpose NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It operates with a collector-emitter voltage of 45V and a continuous collector current of 100mA. The device features a DC current gain (hFE) ranging from 200 to 450 at 2mA and 5V. It is housed in an SOT-23 surface-mount package with a power dissipation rating of 350mW. The component supports a maximum operating temperature of +150°C and meets AEC-Q101 automotive qualification standards.
Feature Summary
- Automotive-grade reliability certified under AEC-Q101 standards for enhanced durability
- High DC current gain range providing consistent amplification performance
- Compact SOT-23 surface-mount packaging for efficient board space utilization
Applications
- General-purpose signal amplification circuits
- Switching applications in consumer electronics
- Driver stages for low-power loads
Procurement Notes
Verify the specific ordering suffix matches the required tape-and-reel quantity and packaging configuration. Confirm that the AEC-Q101 qualification status aligns with target application requirements. Ensure compatibility with standard surface-mount assembly processes. Check for RoHS compliance documentation prior to integration into final products.
Selection Notes
Select this component when high current gain and automotive reliability are required in a small footprint. Compare against complementary PNP types like the BC857B for push-pull configurations. Consider the 45V breakdown voltage limit for circuit design margins. Evaluate thermal management needs given the 350mW dissipation rating in enclosed environments.
Part Context
This part belongs to the BC847 series of general-purpose NPN transistors. It serves as a complement to the BC857B PNP counterpart. The series is designed for low-voltage, low-power amplification and switching tasks. ROHM offers various packaging options within this family to suit different manufacturing constraints.
Replacement Considerations
Direct pin-compatible substitutes include the BC847BHZG variant which shares similar electrical characteristics. Other manufacturers produce equivalent parts such as the BC847BVC-7, though package differences may exist. Verify hFE binning and voltage ratings before substitution.
