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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A SC75 SOT416
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：225 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SC-75, SOT-416
- Grade：-
- Qualification：-
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Overview
The BC847BTT1G is a single NPN silicon general-purpose bipolar junction transistor manufactured by onsemi. It is designed for linearity and switching applications within the BC847BL series. The device features a collector-emitter voltage of 45 V, a continuous collector current of 100 mA, and a transition frequency of 100 MHz. Power dissipation is rated at 300 mW in a SOT-23-3 surface-mount package. DC current gain (hFE) is specified with a minimum value of 200 at 2 mA and 5 V. Operating temperature ranges from -55°C to 150°C.
Feature Summary
- Designed for use in linear and switching applications
- High DC current gain suitable for amplification tasks
- ESD protection exceeding 4000V human model rating
- Complementary PNP type available in the BC857x series
Applications
- Inductive load protection
- Logic level shifting
- Polarity reversal protection circuits
- Audio signal processing
- Industrial control systems
Procurement Notes
Verify the specific suffix 'TT' against official onsemi documentation to confirm tape-and-reel packaging specifications and binning criteria. Ensure the component matches the BC847BL series designation for accurate hFE grading. Cross-reference datasheet revision dates to confirm compliance with current RoHS3 standards and material declarations before final procurement integration.
Selection Notes
Select this component when a standard NPN transistor with moderate gain and low power dissipation is required. The SOT-23-3 package offers space efficiency for surface-mount designs. Consider the BC847C variant if higher current gain is necessary, or the BC847A variant for lower gain requirements. Ensure thermal management aligns with the 300 mW power dissipation limit in the target application environment.
Part Context
This part belongs to the BC847 family of small-signal NPN transistors produced by onsemi. The family includes variants distinguished by hFE gain ranges (A, B, C grades). The BC847B grade provides a mid-range gain specification. These transistors are widely used in consumer electronics and industrial equipment due to their reliability and compact form factor.
Replacement Considerations
Direct substitutes include BC847BT1G and BC847BTT1G from other manufacturers offering identical electrical characteristics and pinout compatibility. Verify that alternative sources maintain the same SOT-23-3 package dimensions and thermal performance ratings.
