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The BC847BVC-7-F is an NPN dual small-signal surface-mount transistor manufactured by Diodes Incorporated. It features a maximum collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 100 mA. The device operates within a junction temperature range of -55°C to +150°C and has a power dissipation rating of 150 mW. Key electrical parameters include a DC current gain (hFE) minimum of 200 at IC=2mA, VCE=5V, and a transition frequency (fT) of 100 MHz. It is housed in a compact SOT-563 package.
Verify the specific suffix against manufacturer documentation to confirm exact binning or tape-and-reel specifications. Ensure the component matches the required AEC-Q101 qualification if automotive use is intended. Cross-reference the datasheet revision date with your design requirements to confirm parameter consistency. Confirm package dimensions match your PCB footprint exactly.
Select this component when a dual NPN transistor is required in a minimal footprint. Compare hFE ranges and saturation voltages against circuit requirements. Consider the 150 mW power dissipation limit for thermal management. Verify compatibility with automated assembly processes given the SOT-563 package type.
This part belongs to the BC847 series of small-signal transistors from Diodes Incorporated. It serves as a dual-transistor alternative to single units, saving board space. The BC847B variant offers a specific current gain range suitable for general-purpose amplification. It is widely used in consumer electronics and industrial control systems.
Check for direct substitutes like BC847BVC without the suffix if packaging differs. Verify equivalent parts from other manufacturers such as Nexperia or ON Semiconductor for pin-compatible alternatives. Ensure replacement parts meet the same AEC-Q101 standards if applicable.