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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A SOT-323
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：200 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SOT-323
- Grade：-
- Qualification：-
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Overview
The BC847BW is a single NPN general-purpose bipolar junction transistor manufactured by Diotec Semiconductor. It utilizes an SOT-323 surface-mount package and operates with a maximum collector current of 100 mA and power dissipation of 200 mW. The device features three distinct DC current gain groups (A, B, C) with Group B providing a typical hFE range of 200 to 450 at IC = 2 mA. Electrical ratings include a collector-emitter voltage of 45 V, collector-base voltage of 50 V, and emitter-base voltage of 5 V. The component supports a junction temperature up to 150°C.
Feature Summary
- Offers three selectable current gain groups for precise amplification control
- Designed for universal signal processing, switching, and amplification tasks
- Compliant with RoHS, REACH, and Conflict Minerals regulations
Applications
- Signal processing circuits
- General purpose switching applications
- Amplifier stages
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm the exact electrical characteristics and compliance grade. Confirm that the 'B' designation aligns with the required DC current gain group specifications for your circuit design. Ensure compatibility with standard SMD assembly processes and verify thermal resistance requirements relative to your PCB copper pad layout.
Selection Notes
Select this component when a standard NPN transistor with moderate voltage ratings and defined gain ranges is required. The availability of multiple gain groups allows designers to optimize performance without custom binning. Consider the SOT-323 footprint constraints and the 200 mW power dissipation limit when designing the thermal management strategy for the target application.
Part Context
This part belongs to the BC846W through BC849W series of SMD general-purpose NPN transistors from Diotec Semiconductor. The series shares common mechanical dimensions and basic operational principles but varies in breakdown voltages and gain groupings. The BC847 variant specifically provides a 45 V collector-emitter rating, positioning it between the lower-voltage BC848 and higher-voltage BC846 models within the lineup.
Replacement Considerations
BC847AW
FAQ
What are the specific DC current gain limits for the BC847BW?
For the BC847BW, the DC current gain (hFE) at IC = 2 mA and VCE = 5 V falls within Group B, which specifies a minimum of 200, a typical value of 290, and a maximum of 450.
How does the BC847BW differ from the BC847AW?
The primary difference lies in the collector-emitter voltage rating. The BC847BW is rated for 45 V, whereas the BC847AW is rated for 65 V. Both share similar current and gain characteristics.
Is the BC847BW suitable for automotive applications?
Standard versions like the BC847BW are designed for commercial/industrial use. For automotive applications requiring AEC-Q101 compliance or qualification, you must select parts with the -Q or -AQ suffixes.
