SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC847BW/DG,115 is a single NPN general-purpose bipolar junction transistor manufactured by Nexperia USA Inc. It operates with a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device utilizes the SOT-323 (SC-70) surface-mount package, measuring 2.2 mm in length and 1.1 mm in height. Key electrical parameters include a minimum DC current gain (hFE) of 200 at 2 mA and 5 V, a transition frequency (fT) of 100 MHz, and a power dissipation rating of 200 mW. The component supports an operating temperature range from -65°C to +150°C.
Verify the specific suffix against official Nexperia documentation to confirm exact binning and packaging specifications. Ensure compatibility with standard SMT assembly processes for the SOT-323 footprint. Confirm RoHS compliance status through the manufacturer's latest declaration before integration into regulated products.
Select this component when a low-profile NPN transistor is required for high-frequency signal processing or switching tasks. The 45 V breakdown voltage provides adequate headroom for low-voltage logic interfaces. Consider the 200 mW thermal limit during circuit design to ensure reliable operation under continuous load conditions.
This part belongs to the BC847 series of general-purpose NPN transistors offered by Nexperia. The series includes variants with different gain ranges and complementary PNP types. The BC847BW specifically denotes the B-gain bin within the SOT-323 package family, widely used in consumer electronics and industrial control systems requiring small form factors.
Direct pin-compatible substitutes include other BC847B variants in the SOT-323 package from Nexperia or equivalent parts from manufacturers like ON Semiconductor and Diodes Inc., provided they meet the 45 V, 100 mA, and hFE=200 requirements.