BC847BW,115

Overview

The BC847BW,115 is an NPN general-purpose transistor manufactured by Nexperia USA Inc. It is housed in a SOT323 (SC-70) surface-mounted plastic package. The device supports a collector-emitter voltage of 45 V and a continuous collector current of 100 mA. For the BC847BW selection group, the DC current gain (hFE) ranges from 200 to 450 at VCE = 5 V and IC = 2 mA. The total power dissipation is rated at 200 mW with a maximum junction temperature of 150 °C.

Feature Summary

• General-purpose NPN transistor designed for switching and amplification applications
• Available in a compact SOT323 (SC-70) surface-mount plastic package
• Offers three distinct DC current gain selection groups for design flexibility

Applications

• General-purpose switching circuits
• Amplifier stages

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select the BC847BW variant when a moderate DC current gain range between 200 and 450 is required. This selection group provides a balance between gain consistency and performance suitable for standard general-purpose applications. Ensure the design accounts for the 45 V collector-emitter voltage limit and the 200 mW power dissipation capability within the SOT323 package constraints.

Part Context

This component belongs to the BC847xW series of NPN general-purpose transistors. The series includes variants with different gain selections: BC847W, BC847AW, BC847BW, and BC847CW. All share the same physical SOT323 package and electrical limits, differing primarily in their hFE binning. The PNP complement for this series is the BC857W.

Replacement Considerations

Direct functional replacements within the same family include BC847W,115, BC847AW,115, and BC847CW,115. These parts share identical pinouts and packages but differ in gain specifications. Verify that the alternative part's hFE range meets the circuit requirements before substitution.