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BC847BWE6327 is a small signal NPN silicon bipolar junction transistor manufactured by Infineon Technologies. It features a maximum collector current of 0.1 A and a collector-emitter voltage rating of 45 V. The device has a minimum DC current gain (hFE) of 200 and operates at a maximum power dissipation of 0.25 W. It utilizes a SOT-323 surface-mount package with three terminals, designed for single-element applications within a temperature range up to 150 °C.
Verify the manufacturer origin, as historical records indicate Siemens production before acquisition by Infineon. Confirm the specific suffix E6327 aligns with required RoHS compliance and tape-and-reel specifications. Cross-reference datasheets from both Infineon and legacy Siemens sources to ensure parameter consistency for design integration.
Select this component when a compact NPN transistor with moderate voltage handling and high gain is required. The SOT-323 package suits automated surface-mount assembly processes. Ensure the application current remains below 100 mA and voltage stays under 45 V to maintain safe operating area limits.
The BC847 series represents a widely used family of general-purpose NPN transistors. The BC847B variant specifically denotes a binning category for higher current gain compared to standard versions. This part integrates into broader semiconductor portfolios for consumer and industrial electronics requiring reliable low-power switching.
Compatible substitutes include BC847B from other manufacturers such as ON Semiconductor or STMicroelectronics, provided they match the SOT-323 footprint and electrical ratings.