BC847BWE6327BTSA1

BC847BWE6327BTSA1

  • Description:TRANS NPN 45V 0.1A PG-SOT323
  • Series:-

SKU:fee92ecb1a17 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN 45V 0.1A PG-SOT323
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:250 mW
  • Frequency - Transition:250MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323
  • Grade:-
  • Qualification:-

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BC847BWE6327BTSA1

Overview

The BC847BWE6327BTSA1 is a small signal NPN bipolar junction transistor manufactured by Infineon Technologies. It features a maximum collector current of 0.1 A and a collector-emitter voltage rating of 45 V. The device utilizes a SOT-323 surface-mount package with three terminals. Key electrical parameters include a minimum DC current gain (hFE) of 200, a maximum power dissipation of 0.25 W, and an operating temperature range up to 150 °C.

Feature Summary

  • NPN silicon construction for general-purpose switching and amplification
  • High DC current gain ensuring effective signal control
  • Compact SOT-323 plastic package for space-constrained designs

Applications

  • General-purpose switching circuits
  • Signal amplification stages
  • Automotive electronics applications

Procurement Notes

Verify the specific suffix BTSA1 against official Infineon documentation to confirm packaging details and availability status. Ensure compatibility with existing design specifications regarding thermal performance and pinout configuration before finalizing procurement decisions.

Selection Notes

Select this component for applications requiring a compact NPN transistor with moderate voltage handling capabilities. The high current gain makes it suitable for low-level signal processing tasks where space efficiency is critical.

Part Context

This part belongs to the BC847 series of general-purpose transistors. The 'W' designation typically indicates a specific gain binning or variant within the family, while the E6327 suffix relates to specific manufacturing or packaging codes used by Infineon.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Generic equivalents may differ in gain ranges or thermal characteristics.

BC847BWE6327BTSA1BC847BWE6327BTSA1

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