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The BC847BWE6327BTSA1 is a small signal NPN bipolar junction transistor manufactured by Infineon Technologies. It features a maximum collector current of 0.1 A and a collector-emitter voltage rating of 45 V. The device utilizes a SOT-323 surface-mount package with three terminals. Key electrical parameters include a minimum DC current gain (hFE) of 200, a maximum power dissipation of 0.25 W, and an operating temperature range up to 150 °C.
Verify the specific suffix BTSA1 against official Infineon documentation to confirm packaging details and availability status. Ensure compatibility with existing design specifications regarding thermal performance and pinout configuration before finalizing procurement decisions.
Select this component for applications requiring a compact NPN transistor with moderate voltage handling capabilities. The high current gain makes it suitable for low-level signal processing tasks where space efficiency is critical.
This part belongs to the BC847 series of general-purpose transistors. The 'W' designation typically indicates a specific gain binning or variant within the family, while the E6327 suffix relates to specific manufacturing or packaging codes used by Infineon.
Consult official cross-reference lists for verified substitutes. Generic equivalents may differ in gain ranges or thermal characteristics.