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The BC847BWH6327XTSA1 is an NPN general-purpose bipolar junction transistor manufactured by Infineon Technologies. It features a PG-SOT323-3 surface-mount package and is qualified to AEC-Q101 automotive standards. Key electrical parameters include a collector-emitter voltage (VCEO) of 45 V, a continuous collector current (IC) of 100 mA, and a power dissipation (PD) of 250 mW. The device operates within a temperature range of -55 °C to +150 °C.
Verify the specific hFE binning configuration required for your application, as the datasheet specifies a wide gain range (420–800). Confirm that the PG-SOT323-3 footprint matches your PCB layout constraints. Ensure supply chain sources provide genuine Infineon components to maintain AEC-Q101 compliance and thermal stability up to 150 °C.
Select this component when an NPN transistor with moderate voltage handling (45 V) and high current gain is needed in a small form factor. It is suitable for applications where automotive qualification is mandatory but higher current capacity than standard small-signal transistors is not required. Consider thermal management if operating near the maximum power dissipation limit.
This part belongs to Infineon's BC847 series of general-purpose NPN transistors. The 'BW' suffix typically denotes specific binning or packaging variations within the family, while 'H6327XTSA1' indicates the tape-and-reel packaging format. It serves as a standard replacement for legacy BC847B devices in modern automotive and industrial designs.
Direct pin-compatible replacements include other AEC-Q101 qualified NPN transistors in SOT-323 packages with similar VCEO and IC ratings. Verify that substitute parts meet the same hFE gain specifications and thermal characteristics to ensure circuit performance parity.