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The BC847BWT1G is a general-purpose NPN silicon epitaxial planar transistor housed in the SC-70 (SOT-323) surface-mount package. It features a collector-emitter voltage of 45 V, a continuous collector current of 100 mA, and a total device dissipation of 200 mW at 25°C ambient temperature. The component offers a DC current gain ranging from 200 to 450 at a collector current of 2.0 mA and a collector-emitter voltage of 5.0 V. It includes an output capacitance of 4.5 pF and a current-gain bandwidth product of 100 MHz.
Verify the specific ordering suffix against official documentation to confirm packaging details and automotive qualification status. Ensure that any prefix variations align with site-specific control requirements if used in regulated environments. Confirm compliance with environmental directives such as RoHS before finalizing procurement specifications.
Select this component for applications requiring a small-form-factor NPN transistor with moderate voltage ratings. The SOT-323 package is ideal for space-constrained PCB layouts. Consider the thermal resistance and power dissipation limits when designing for higher ambient temperatures or dense circuitry.
This part belongs to the BC846/BC847/BC848 family of general-purpose transistors. The BC847 variant specifically provides a 45 V collector-emitter breakdown voltage, distinguishing it from the lower-voltage BC848 and higher-voltage BC846 models within the same series.
The BC857B serves as the complementary PNP type within the same family. Other manufacturers produce equivalent parts under the BC847B designation, though pinout and electrical tolerances should be verified against the specific datasheet.
The maximum collector-emitter voltage (VCEO) is 45 V.
Devices with the 'S' or 'NSV' prefix are AEC-Q101 qualified and PPAP capable for automotive applications.
The DC current gain (hFE) ranges from 200 to 450 when measured at IC = 2.0 mA and VCE = 5.0 V.