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The BC847C/SNR is a single NPN general-purpose bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-23 (TO-236AB) surface-mount package. The device supports a maximum DC collector current of 100 mA and features a collector-emitter voltage rating of 45 V, with a collector-base voltage of 50 V and an emitter-base voltage of 6 V. Key electrical characteristics include a power dissipation capacity of 250 mW, a gain-bandwidth product of 100 MHz, and a minimum DC current gain (hFE) of 420 at 2 mA and 5 V. The component operates within a temperature range of -65 °C to +150 °C.
Verify the specific suffix against official Nexperia documentation to confirm package type and gain binning. Ensure the ordering code matches the required hFE range and thermal specifications. Confirm RoHS compliance status through the manufacturer's datasheet before finalizing procurement plans.
Select this component when a high-gain NPN transistor is required in a standard SOT-23 footprint. The BC847C variant offers superior current gain compared to lower letter codes, making it suitable for low-current amplification tasks where precise biasing is necessary without excessive base drive.
This part belongs to the Nexperia BC847 series of general-purpose NPN transistors. The series provides multiple gain options (A, B, C) within the same physical package, allowing designers to optimize circuit performance while maintaining consistent board layout requirements across different production batches or design iterations.
Compatible substitutes include BC847C,215 and BC847C/T3. Verify pinout compatibility and thermal resistance values when replacing components in existing designs to ensure reliable operation under identical load conditions.