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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A PG-SOT23
- Series：SOT-23
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：200 mW
- Frequency - Transition：100MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
- Grade：-
- Qualification：-
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Overview
The BC847CE6327HTSA1 is an NPN silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a compact SOT-323 surface-mount package and designed for general-purpose amplification and switching applications. The device features a maximum collector-emitter voltage of 45 V, a continuous collector current of 100 mA, and a power dissipation rating of 225 mW. It exhibits a high DC current gain ranging from 200 to 450 at a collector current of 2 mA. The component operates within a temperature range of -55 °C to +150 °C and meets AEC-Q100 automotive qualification standards.
Feature Summary
- High DC current gain optimized for low-current signal amplification
- Automotive-grade reliability compliant with AEC-Q100 standards
- Compact SOT-323 surface-mount packaging for space-constrained designs
Applications
- General-purpose signal amplification in consumer electronics
- Switching circuits in battery-powered devices
- Driver stages for LEDs and small loads in automotive modules
Procurement Notes
Verify the specific suffix 'E6327HTSA1' against official Infineon documentation to confirm the reel quantity and tape-and-reel specifications. Ensure the procurement channel provides traceability to the original manufacturer. Confirm RoHS compliance status through the latest datasheet revision. Check for any obsolescence notices or lifecycle status updates directly from Infineon before finalizing orders.
Selection Notes
Select this component when a small-form-factor NPN transistor with high current gain is required for low-power applications. The SOT-323 package offers a smaller footprint than standard SOT-23 variants. Consider the 45 V breakdown voltage and 100 mA current limit for circuit design constraints. Verify thermal management requirements given the 225 mW power dissipation limit in the specified package.
Part Context
This part belongs to the BC847 series of general-purpose NPN transistors. The series is widely used in audio pre-amplifiers, logic interfaces, and sensor signal conditioning. The BC847CE variant specifically denotes a binning category for higher current gain compared to standard BC847B parts. Infineon produces these components using mature silicon planar technology suitable for mass-market electronic equipment.
Replacement Considerations
Cross-reference with BC847CE other manufacturers such as ON Semiconductor or STMicroelectronics. Verify pinout compatibility and electrical parameter overlaps, particularly hFE bins and VCEO ratings. Ensure the replacement package matches the SOT-323 form factor for PCB integration.
