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The BC847CLT1G is an NPN silicon general-purpose transistor manufactured by onsemi. It operates within a collector-emitter voltage of 45 V and a collector-base voltage of 50 V, with a continuous collector current rating of 100 mA. The device features a DC current gain (hFE) ranging from 270 to 520 at IC = 2.0 mA and VCE = 5.0 V. It is housed in a SOT-23 package and supports a junction temperature range of -55°C to +150°C.
Verify the specific suffix 'C' corresponds to the required hFE binning for your design. Confirm that the SOT-23 pinout matches your PCB footprint. Ensure compliance with RoHS directives if applicable to your region. Check for automotive PPAP requirements if used in safety-critical systems.
Select this component when a moderate voltage rating of 45 V is sufficient. The high gain range makes it ideal for low-current amplification tasks. Consider thermal dissipation limits in dense layouts. Compare against BC846 or BC848 variants if different voltage thresholds are needed.
This part belongs to the BC846ALT1G series family of NPN silicon transistors. It shares the same physical package and basic electrical structure as other members like BC846 and BC848 but differs in breakdown voltage and gain specifications. The series is widely used in consumer and industrial electronics.
BC847CLT3G offers identical electrical characteristics with a different reel quantity packaging option.