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The BC847CLT3G is a general-purpose NPN silicon transistor from the BC846ALT1G series, manufactured by onsemi. It features a collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device provides a DC current gain (hFE) range of 290 to 520 at a collector current of 2.0 mA. Packaged in an SOT-23 (TO-236) surface-mount case, it operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix 'LT3G' against official documentation to confirm the 10,000-unit tape and reel packaging configuration. Ensure the component meets RoHS compliance standards and check for AEC-Q101 automotive qualification requirements if applicable to the target application environment.
Select this component when a high-gain NPN transistor is required for general-purpose signal processing or switching tasks. The BC847C variant offers higher current gain than the A or B variants. Confirm that the 45 V collector-emitter breakdown voltage aligns with the circuit's maximum operating voltage constraints.
This part belongs to the BC846ALT1G series, which includes various NPN transistors differentiated by their DC current gain ranges and voltage ratings. The series utilizes standard SOT-23 packaging for compact surface-mount designs. Other members include BC846, BC848, and BC849 variants with different electrical characteristics.
BC847BLT3G
The device marking code is 1G.
Standard BC847CLT3G units are not explicitly marked as automotive qualified; however, the NSV prefix indicates AEC-Q101 qualification and PPAP capability.
The total device dissipation is 225 mW on an FR-5 board at 25°C ambient temperature.