SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC847CQ-7-F is a single NPN bipolar junction transistor manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an SOT-23 surface-mount package. The device supports a maximum DC collector current of 100 mA and features a collector-emitter breakdown voltage (VCEO) of 45 V, with a collector-base voltage (VCBO) of 50 V and emitter-base voltage (VEBO) of 6 V. Power dissipation is rated at 310 mW, while the gain-bandwidth product (fT) reaches 300 MHz. Operating temperatures range from -65°C to +150°C.
Verify the specific suffix 'Q' indicates automotive grade qualification against the official Diodes Incorporated datasheet. Confirm the manufacturer part number matches exactly, as distributor listings may vary. Ensure the ordering quantity aligns with the standard tape and reel packaging specifications provided by the manufacturer.
Select this component when an NPN transistor with 45 V collector-emitter voltage and 100 mA continuous current capability is required. The 300 MHz transition frequency supports moderate-speed switching. Verify that the SOT-23 footprint fits the PCB layout constraints and that the 310 mW power dissipation rating meets thermal requirements.
This component belongs to the BC847 series of small-signal NPN transistors produced by Diodes Incorporated. The 'Q' suffix typically denotes automotive-grade qualification, distinguishing it from standard commercial variants like the BC847C-7-F. It serves as a discrete replacement for integrated arrays or other single-transistor solutions in low-power designs.
BC847C-7-F: Commercial grade equivalent without automotive qualification. BC847CDLP-7: Dual NPN array in X2-DFN package, not a direct pin-compatible replacement.