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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A DFN1110D-3
- Series：BC847xQB
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：340 mW
- Frequency - Transition：100MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：3-XDFN Exposed Pad
- Supplier Device Package：DFN1110D-3
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BC847CQBZ is a general-purpose NPN bipolar junction transistor manufactured by Nexperia. It operates with a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device features a minimum DC current gain (hFE) of 400, ensuring high amplification capability. It is housed in an SOT-323 surface-mount package, measuring 1.7 mm in length, 1.2 mm in width, and 0.9 mm in height. The component supports a maximum power dissipation of 225 mW and functions within a temperature range of -55 °C to +150 °C.
Feature Summary
- High DC current gain selection for efficient signal amplification
- Compact SMD plastic package for automated surface mounting
- General-purpose switching and amplification capabilities
Applications
- General-purpose switching circuits
- Small-signal amplification stages
- Driver applications for low-power loads
Procurement Notes
Verify the specific suffix 'BZ' against official Nexperia documentation to confirm tape-and-reel packaging specifications and binning details. Ensure the selected hFE grade matches the design requirements, as gain ranges vary within the C series. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement.
Selection Notes
Select this component when a high-gain NPN transistor is required in a compact footprint. The BC847CQBZ offers superior current gain compared to standard variants, making it suitable for sensitive amplification tasks. Verify that the thermal management strategy accommodates the 225 mW power dissipation limit in the intended enclosure environment.
Part Context
This part belongs to the BC847 family of general-purpose NPN transistors from Nexperia. The family includes variants with different gain selections (A, B, and C grades) and complementary PNP types like the BC857. These devices are widely used in consumer electronics and industrial equipment due to their reliability and small form factor.
Replacement Considerations
Direct replacements include other BC847C variants such as BC847CW or BC847CP, provided the package type and gain specifications align. Verify pinout compatibility and electrical ratings before substituting.
