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The BC847CTT1G is a single NPN silicon bipolar junction transistor manufactured by onsemi. It operates with a maximum collector current of 100 mA and features a collector-emitter voltage rating of 45 V, alongside a collector-base voltage of 50 V and an emitter-base voltage of 6 V. The device provides a minimum DC current gain (hFE) of 420 at 2 mA and 5 V. Electrical characteristics include a transition frequency of 100 MHz and a collector-emitter saturation voltage of 600 mV. Power dissipation is rated at 200 mW within the SC-75-3 package, supporting operation between -55°C and +150°C.
Verify the specific suffix TT1G to confirm the SC-75-3 package configuration and reel packaging type. Ensure the component meets AEC-Q101 automotive standards if required for the target application. Cross-reference datasheet parameters against design requirements before integration.
Select this component when high current gain is necessary for low-level signal processing. The SC-75-3 package offers space efficiency compared to standard SOT-23 variants. Verify thermal management capabilities as power dissipation limits are lower than larger packages.
This part belongs to the BC847ATT1 series of general-purpose NPN transistors. It shares electrical similarities with other BC847 variants but distinguishes itself through specific gain binning and packaging options designed for compact surface-mount applications.
BC847BTT1G
The BC847CTT1G utilizes the SC-75-3 surface-mount package.
Yes, the BC847CTT1G is qualified according to the AEC-Q101 standard.