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The BC847CW-TP is a single NPN silicon bipolar junction transistor manufactured by Micro Commercial Components. It operates with a maximum collector-emitter voltage of 45 V and a collector-base voltage of 50 V. The device supports a continuous collector current of 100 mA and dissipates up to 200 mW of power. Key electrical characteristics include a minimum DC current gain (hFE) of 420 at 2 mA and 5 V, a transition frequency of 100 MHz, and a collector-emitter saturation voltage of 600 mV at 5 mA and 100 mA. It functions within a temperature range of -65°C to +150°C.
Verify the specific suffix against official manufacturer documentation to confirm functional equivalence, as ordering codes may indicate variations in packaging or testing standards. Confirm RoHS3 compliance and REACH status through the latest datasheet. Ensure the SOT-323 package dimensions match your PCB footprint requirements before finalizing procurement decisions.
Select this component when high current gain and automotive reliability are required in a compact surface-mount form factor. The BC847CW-TP offers superior hFE compared to standard variants, making it suitable for low-current amplification tasks. Consider the 200 mW power dissipation limit and thermal management needs for dense circuit layouts.
This part belongs to the BC847 series of small-signal NPN transistors produced by Micro Commercial Components. It is designed for general-purpose applications where space constraints and performance consistency are critical. The device utilizes silicon technology and is housed in an SOT-323 package, providing a compact solution for modern electronic designs.
BC847CWHE3-TP is a verified equivalent offering higher transition frequency and gain specifications within the same package.