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The BC847CW_R1_00001 is a general-purpose NPN bipolar junction transistor manufactured by Panjit International Inc. It operates with a maximum collector-emitter voltage of 30V and a continuous collector current of 100mA. The device features a DC current gain (hFE) ranging from 200 to 450, ensuring reliable amplification performance. Designed for surface-mount applications, it utilizes the SOT-323 package configuration. The component supports an operating temperature range from -55°C to +150°C and dissipates up to 200mW of power.
Verify the specific ordering suffix against manufacturer documentation to confirm pinout and electrical tolerances. Confirm RoHS compliance status through official datasheets prior to integration. Ensure ESD handling protocols are followed during assembly due to the small form factor. Cross-reference the manufacturer part number with distributor listings to validate authenticity and supply chain integrity.
Select this component when a compact NPN transistor with moderate voltage ratings is required. The SOT-323 package suits high-density PCB layouts. Verify that the 30V collector-emitter rating aligns with circuit requirements. Consider the hFE range for biasing stability in amplifier designs. Evaluate thermal management needs based on the 200mW power dissipation limit in enclosed environments.
This part belongs to the GPT-02TAN series of general-purpose transistors from Panjit. It serves as a standard discrete semiconductor solution for low-power electronic applications. The product line targets mass-market consumer devices requiring reliable switching performance. It complements other small-signal components in comprehensive discrete portfolios.
Consult official substitution guides for compatible NPN transistors in the SOT-323 package. Verify equivalent voltage and current ratings before implementation.