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The BC847CWQ-7-F is a general-purpose NPN bipolar junction transistor manufactured by Diodes Incorporated. It features a maximum collector-emitter voltage of 45 V and a continuous collector current rating of 100 mA. The device operates within a temperature range of -65°C to +150°C. Key electrical specifications include a transition frequency of 300 MHz and a power dissipation capacity of 200 mW. It is housed in an SOT-323 surface-mount package.
Verify the specific suffix Q against official Diodes Incorporated documentation to confirm automotive compliance status. Ensure the SOT-323 package dimensions match the target PCB footprint requirements. Confirm RoHS and halogen-free material declarations align with project environmental standards before finalizing procurement.
Select this component when a compact NPN transistor with high gain and automotive reliability is required. Compare the 200 mW power dissipation limit against thermal constraints. Verify that the 45 V breakdown voltage exceeds the circuit's maximum operating voltage. Consider the SOT-323 package size for space-constrained designs.
This part belongs to the BC847 series of small-signal transistors from Diodes Incorporated. The series includes various configurations such as single NPN, PNP, and complementary pairs. The BC847CWQ variant specifically targets applications requiring enhanced reliability and compliance with automotive industry standards.
The maximum collector-emitter voltage (VCEO) is 45 V.
Yes, it is qualified to AEC-Q101 standards for high reliability.
The transition frequency (fT) is 300 MHz.