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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A SC70-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：150 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70-3 (SOT323)
- Grade：-
- Qualification：-
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Overview
The BC847CWT1G is an NPN silicon general-purpose transistor manufactured by onsemi. It operates with a continuous collector current of 100 mA and features a collector-emitter breakdown voltage of 45 V. The device utilizes the SC-70 (SOT-323) surface-mount package, designed for low-power applications. Electrical characteristics include a DC current gain range of 420 to 800 at 2 mA collector current. Thermal dissipation reaches 200 mW on an FR-5 board, with an operating junction temperature range from -55°C to +150°C.
Feature Summary
- Designed for general-purpose amplifier applications in low-power surface mount environments
- Compliant with RoHS standards and free of halogens and brominated flame retardants
- Capable of supporting automotive qualification requirements when ordered with specific prefixes
Applications
- General purpose switching circuits
- Low power amplification stages
- Automotive electronic systems requiring AEC-Q101 qualification
Procurement Notes
Verify the presence of the 'S' or 'NSV' prefix if automotive-grade components are required, as these indicate unique site control and PPAP capability. Confirm that the standard version meets general commercial specifications without additional automotive testing documentation. Ensure the ordering suffix matches the desired tape and reel quantity of 3,000 units.
Selection Notes
Select this component for designs requiring high DC current gain within a compact SOT-323 footprint. The BC847C variant provides superior gain compared to A and B series options. Consider thermal resistance limits when designing for high ambient temperatures. Verify compatibility with automated insertion equipment due to the specific case outline dimensions.
Part Context
This part belongs to the BC846/BC847/BC848 family of NPN silicon transistors produced by onsemi. These devices share identical physical packaging but differ in electrical gain classifications. The BC847C specifically targets applications needing higher current amplification than the BC847B variant while maintaining the same voltage ratings and package constraints.
Replacement Considerations
Compatible substitutes include BC847C from other manufacturers such as Diodes Incorporated or NXP Semiconductors. Verify pinout alignment and absolute maximum ratings before substitution. Ensure equivalent hFE ranges match circuit requirements.
