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The BC848A is a single NPN bipolar junction transistor manufactured by Taiwan Semiconductor Corporation. It features a collector-emitter breakdown voltage of 30 V and a maximum continuous collector current of 100 mA. The device utilizes a planar epitaxial silicon structure housed in an SOT-23 surface-mount package. Key electrical characteristics include a minimum DC current gain (hFE) of 110 at 2 mA and 5 V, a transition frequency of 100 MHz, and a maximum power dissipation of 225 mW. Operating temperatures range from -55°C to +150°C.
Verify the manufacturer designation explicitly as Taiwan Semiconductor Corporation during sourcing. Confirm the specific suffix matches the required tape-and-reel or cut-tape packaging format. Ensure compliance with RoHS directives and check for any recent Product Change Notifications that may affect assembly parameters or material composition.
Select this component when a standard NPN BJT with 30 V rating and 100 mA capability is required. The SOT-23 package offers space efficiency for compact designs. Consider the 100 MHz transition frequency for moderate-speed signal handling. Verify thermal management requirements against the 225 mW power dissipation limit in the target application environment.
This component belongs to the BC848 series of general-purpose NPN transistors. It shares functional similarities with other manufacturers' equivalents but maintains specific parameter tolerances defined by Taiwan Semiconductor. The part is widely used in portable devices and industrial control systems requiring reliable small-signal switching.
Cross-reference with BC848A parts from other vendors such as Diotec or MCC. Verify pinout compatibility and ensure hFE binning meets circuit requirements. Check datasheet differences regarding saturation voltage and leakage currents before substitution.