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The onsemi BC848ALT1 is an NPN silicon general-purpose transistor housed in a surface-mount SOT-23 package. It features a maximum collector-emitter voltage of 30 V and a continuous collector current rating of 100 mA. The device offers a minimum DC current gain (hFE) of 110 at low currents, scaling up to 520 at higher drive levels. Electrical characteristics include a transition frequency (fT) of 100 MHz and a total power dissipation of 225 mW on standard FR-5 boards. Operating temperatures range from -55°C to +150°C.
Verify the specific suffix against official documentation to confirm lead-free status and tape-and-reel specifications. Ensure the ordering code matches the required hFE binning grade. Confirm that the procurement channel sources directly from authorized distributors to guarantee component authenticity and traceability.
Select this component when a 30 V breakdown voltage is sufficient for the application. Compare the 100 mA current limit against peak load requirements. Evaluate the thermal resistance of 556 °C/W against the expected ambient temperature and board layout constraints to ensure junction temperatures remain within safe operating limits.
This part belongs to the BC846ALT1 series, which includes variants with different voltage ratings such as the BC846 (65 V) and BC847 (45 V). All members share the same SOT-23 footprint and pinout configuration, facilitating design flexibility while maintaining consistent mechanical integration across product lines.
BC848ALT1G serves as the direct lead-free equivalent within the same series.
The maximum collector-emitter voltage (VCEO) is 30 V.
Yes, lead-free packages are available and compliant with EU RoHS directives.
The device has an ESD rating greater than 4000 V according to the Human Body Model.