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The BC848B,215 is an NPN general-purpose transistor manufactured by Nexperia USA Inc. It operates within the BC848 series, featuring a maximum collector-emitter voltage of 30 V and a continuous collector current rating of 100 mA. The device utilizes SOT23 (TO-236AB) surface-mounted plastic packaging with three leads. Key electrical characteristics include a DC current gain (hFE) range of 200 to 450 at VCE = 5V and IC = 2mA. The component supports a total power dissipation of 250 mW at 25°C ambient temperature and maintains a junction temperature limit of 150°C.
Verify the specific ordering suffix against official Nexperia documentation to confirm manufacturing origin details. Ensure compatibility with standard SOT23 footprints during PCB layout. Confirm that design parameters remain within absolute maximum ratings to prevent device stress or permanent damage during operation.
Select this component for low-voltage signal processing tasks requiring moderate current handling. The specified hFE binning suits applications needing predictable gain characteristics. Verify thermal management requirements on FR4 PCBs to ensure junction temperatures stay within operational limits under load conditions.
This part belongs to the BC848 series of NPN transistors produced by Nexperia. The series includes complementary PNP devices such as the BC858B. The BC848B variant specifically denotes the B-bin gain classification within the SOT23 package format, distinguishing it from other series members like the BC848W in SOT323 packages.
BC858B serves as the PNP complement within the same series.