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The BC848B_R1_00001 is an NPN general-purpose bipolar junction transistor manufactured by Panjit International Inc. It features a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 100mA. The device utilizes a planar epitaxial silicon design and is housed in a SOT-23 surface-mount package. It operates within a temperature range of -55°C to +150°C and has a maximum power dissipation of 150mW.
Verify the specific suffix R1_00001 against official Panjit documentation to confirm reel packaging and tape specifications. Ensure the component matches the required SOT-23 footprint and pinout configuration for your PCB layout. Cross-reference the datasheet revision date to guarantee parameter accuracy during final validation.
Select this component when a 30V NPN transistor with 100mA current capability is required in a compact SOT-23 package. It serves as a direct replacement for standard BC848B devices in low-power signal and switching designs. Confirm that the 150mW power dissipation rating meets the thermal requirements of the target application environment.
This part belongs to the BC848 series of NPN general-purpose transistors produced by Panjit. The series includes variants with different gain ranges, such as BC848A, BC848C, and BC848D. The BC848B variant specifically targets applications requiring moderate current gain, balancing performance and cost for mass-market electronic assemblies.
BC848BW_R1_00001
The maximum collector-emitter breakdown voltage (VCEO) is 30V.
Yes, the component is lead-free and complies with EU RoHS 2002/95/EC directives.