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The BC848BL3E6327XTMA1 is an NPN silicon small-signal bipolar junction transistor manufactured by Infineon Technologies. It operates with a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device features a minimum DC current gain (hFE) of 420, ensuring high amplification capability. It is housed in a TSLP-3 surface-mount package with a power dissipation rating of 250 mW. The component supports operation across a temperature range from -55 °C to +150 °C.
Verify the specific suffix against official Infineon documentation to confirm pinout and electrical characteristics. Confirm RoHS compliance status through the manufacturer's datasheet. Check for obsolescence notices as component lifecycles may change. Ensure the TSLP-3 package dimensions match your PCB footprint requirements before finalizing procurement.
Select this component when a high-gain NPN transistor is required in a compact SMD form factor. The 45 V collector-emitter voltage provides headroom above standard 30 V variants. The TSLP-3 package offers a smaller footprint compared to traditional SOT-23 packages. Verify that the 250 mW power dissipation rating meets the thermal constraints of the target application circuit.
This part belongs to the BC848 family of small-signal NPN transistors produced by Infineon Technologies. The 'L3' designation typically indicates the specific TSLP-3 package variant. The 'E6327' suffix denotes the specific tape and reel packaging configuration used for automated assembly processes. This series is widely utilized in consumer electronics and industrial control systems requiring reliable low-power switching.
Publicly confirmed substitute part numbers are not available in the provided source material.