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The BC848BLT1 is an NPN silicon general-purpose transistor from the onsemi BC846ALT1 series, housed in a SOT-23 (CASE 318) surface-mount package. It features a collector-emitter voltage rating of 30 V and a continuous collector current of 100 mA. The device offers a DC current gain ranging from 110 to 450 at IC = 2.0 mA and VCE = 5.0 V. Key electrical parameters include a base-emitter saturation voltage of 0.7 V max at IC = 10 mA, and a transition frequency of 100 MHz. Thermal resistance junction-to-ambient is 556 °C/W on an FR-5 board.
Verify the specific ordering suffix 'BLT1' corresponds to the required binning grade and tape-and-reel quantity. Confirm that the Pb-free status aligns with environmental compliance requirements for the target assembly process. Ensure the SOT-23 footprint matches the PCB design guidelines provided in the datasheet package dimensions section.
Select this component when a 30 V collector-emitter breakdown voltage is sufficient for the application. Choose based on the required hFE range, noting that the 'B' suffix indicates a specific gain bin compared to other series variants. Consider the thermal constraints of the SOT-23 package if operating near maximum dissipation limits.
This part belongs to the BC846/BC847/BC848 family of preferred devices from onsemi. These transistors share similar physical packages but differ primarily in their voltage ratings and gain characteristics. The BC848 variant specifically targets applications requiring lower voltage tolerance compared to the BC846 or BC847 models within the same series.
Direct substitutes within the same series include BC848ALT1 and BC848CLT1, which share the SOT-23 package and NPN configuration but may differ in gain binning or voltage ratings. Verify pinout compatibility and electrical specifications before substitution.
The maximum collector-emitter voltage (VCEO) is 30 Vdc.
The device has an ESD rating of greater than 4000 V according to the Human Body Model and greater than 400 V according to the Machine Model.
The DC current gain (hFE) ranges from 110 to 450 when measured at IC = 2.0 mA and VCE = 5.0 V.