BC848BLT1

BC848BLT1

$0.11
  • Description:TRANS NPN 30V 100MA SOT23
  • Series:*

SKU:0a221edf5626 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 30V 100MA SOT23
  • Series:*
  • Mfr:onsemi
  • Package:Cut Tape (CT),Bulk
  • Transistor Type:-
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:-
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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BC848BLT1

Overview

The BC848BLT1 is an NPN silicon general-purpose transistor from the onsemi BC846ALT1 series, housed in a SOT-23 (CASE 318) surface-mount package. It features a collector-emitter voltage rating of 30 V and a continuous collector current of 100 mA. The device offers a DC current gain ranging from 110 to 450 at IC = 2.0 mA and VCE = 5.0 V. Key electrical parameters include a base-emitter saturation voltage of 0.7 V max at IC = 10 mA, and a transition frequency of 100 MHz. Thermal resistance junction-to-ambient is 556 °C/W on an FR-5 board.

Feature Summary

  • General-purpose NPN silicon construction designed for standard switching and amplification tasks.
  • Surface-mount SOT-23 packaging optimized for automated assembly and space-constrained designs.
  • High electrostatic discharge protection exceeding 4000 V via Human Body Model standards.

Applications

  • General signal switching circuits
  • Low-frequency amplification stages
  • Driver applications for low-power loads

Procurement Notes

Verify the specific ordering suffix 'BLT1' corresponds to the required binning grade and tape-and-reel quantity. Confirm that the Pb-free status aligns with environmental compliance requirements for the target assembly process. Ensure the SOT-23 footprint matches the PCB design guidelines provided in the datasheet package dimensions section.

Selection Notes

Select this component when a 30 V collector-emitter breakdown voltage is sufficient for the application. Choose based on the required hFE range, noting that the 'B' suffix indicates a specific gain bin compared to other series variants. Consider the thermal constraints of the SOT-23 package if operating near maximum dissipation limits.

Part Context

This part belongs to the BC846/BC847/BC848 family of preferred devices from onsemi. These transistors share similar physical packages but differ primarily in their voltage ratings and gain characteristics. The BC848 variant specifically targets applications requiring lower voltage tolerance compared to the BC846 or BC847 models within the same series.

Replacement Considerations

Direct substitutes within the same series include BC848ALT1 and BC848CLT1, which share the SOT-23 package and NPN configuration but may differ in gain binning or voltage ratings. Verify pinout compatibility and electrical specifications before substitution.

FAQ

What is the maximum collector-emitter voltage for the BC848BLT1?

The maximum collector-emitter voltage (VCEO) is 30 Vdc.

What is the ESD rating for this component?

The device has an ESD rating of greater than 4000 V according to the Human Body Model and greater than 400 V according to the Machine Model.

What is the typical DC current gain range?

The DC current gain (hFE) ranges from 110 to 450 when measured at IC = 2.0 mA and VCE = 5.0 V.

BC848BLT1BC848BLT1
$0.11
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