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Product Detailed Parameters
- Description：TRANS NPN 30V 0.1A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：300 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The onsemi BC848BLT1G is an NPN silicon general-purpose transistor belonging to the BC846ALT1G series. It features a collector-emitter voltage (VCEO) of 30 V and a collector-base voltage (VCBO) of 30 V. The device supports a continuous collector current of 100 mA with a maximum power dissipation of 225 mW in the SOT-23 package. Electrical characteristics include a DC current gain (hFE) range of 150 to 420 at IC = 2.0 mA, and a transition frequency (fT) of 100 MHz. Operating temperatures span from -55°C to +150°C.
Feature Summary
- NPN silicon construction designed for general-purpose amplifier applications
- High DC current gain suitable for low-current switching and amplification tasks
- Automotive qualification available via S and NSV prefixes with AEC-Q101 certification
Applications
- General-purpose signal amplification
- Low-power switching circuits
- Automotive electronics requiring unique site control
Procurement Notes
Verify the specific ordering suffix to confirm packaging type and automotive qualification status. The standard LT1G suffix indicates tape and reel packaging with 3,000 units per reel. Prefixes such as S or NSV denote devices qualified under AEC-Q101 standards for automotive applications. Confirm RoHS compliance and Pb-free status during procurement validation.
Selection Notes
Select this component when a 30 V collector-emitter breakdown voltage is required for NPN switching or amplification. The BC848B variant offers a high DC current gain range of 150 to 420, making it suitable for applications demanding significant signal amplification at low currents. Ensure the thermal management strategy accommodates the 225 mW power dissipation limit in the SOT-23 package.
Part Context
This part belongs to the BC846ALT1G series of general-purpose NPN silicon transistors manufactured by onsemi. The series includes variants with different voltage ratings, such as BC846 (65 V), BC847 (45 V), and BC848/BC849 (30 V). All share similar packaging and thermal characteristics but differ in breakdown voltage specifications.
Replacement Considerations
Direct substitutes within the same family include BC848ALT1G and BC848CLT1G, which share the SOT-23 package and 30 V rating but differ in hFE gain ranges. Automotive-grade equivalents are available with S or NSV prefixes, such as SBC848BLT1G.
