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The onsemi BC848BWT1G is an NPN silicon general-purpose transistor housed in the SC-70 (SOT-323) surface-mount package. It features a collector-emitter voltage of 30 V, a continuous collector current of 100 mA, and a total device dissipation of 200 mW. The component offers a minimum DC current gain of 290 at 2.0 mA and a transition frequency of 100 MHz. Designed for low-power applications, it operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix to confirm the manufacturer's site and quality control requirements. Confirm that the AEC-Q101 qualification and PPAP capability are required for the intended application environment. Ensure the SC-70 package dimensions match the PCB footprint design constraints.
Select this component when a low-voltage NPN transistor with moderate current handling is needed for space-constrained designs. The BC848 series provides a 30 V rating suitable for lower voltage logic interfaces. Consider the specific hFE binning if precise gain characteristics are critical for the amplifier stage.
This part belongs to the BC846/BC847/BC848 family of NPN general-purpose transistors manufactured by onsemi. The 'B' suffix indicates a specific DC current gain binning level. The 'WT1G' designation specifies the SOT-323 tape and reel packaging format with lead-free compliance.
Compatible substitutes include other manufacturers' BC848B variants in the SOT-323 package. Verify pinout compatibility and electrical parameter limits before substitution.