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The onsemi BC848CLT1 is an NPN silicon general-purpose transistor in a SOT-23 surface-mount package. It features a collector-emitter voltage of 30 V, a collector-base voltage of 30 V, and an emitter-base voltage of 5.0 V. The device supports a continuous collector current of 100 mA with a maximum power dissipation of 225 mW at 25°C. Electrical characteristics include a DC current gain (hFE) ranging from 270 to 520 at IC = 2.0 mA, and a transition frequency (fT) of 100 MHz. Operating temperatures span from -55°C to +150°C.
Verify the specific ordering suffix to confirm packaging quantity and lead-free status. Confirm that the component meets AEC-Q101 qualification if automotive reliability is required. Ensure the SOT-23 footprint matches the design layout before procurement.
Select this component when a high-gain NPN transistor with a 30 V breakdown voltage is needed. Compare against BC846 or BC847 variants if higher voltage ratings are required. Verify thermal management requirements for power dissipation near the 225 mW limit.
This part belongs to the BC846ALT1 series, which includes BC846, BC847, BC848, BC849, and BC850 devices. These are preferred devices from onsemi designed for general-purpose use. The series shares similar physical dimensions but varies in voltage ratings and gain bands.
BC848ALT1G
The maximum collector-emitter voltage (VCEO) is 30 V.
Yes, the BC846ALT1 series, including the BC848 variant, is AEC-Q101 qualified.
For the 'C' code bin, the DC current gain (hFE) ranges from 270 to 520 at IC = 2.0 mA.