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The onsemi BC848CLT3G is an NPN silicon general-purpose transistor from the BC846ALT1G series, housed in a surface-mount SOT-23 package. It features a collector-emitter voltage of 30 V and a continuous collector current rating of 100 mA. The device offers a minimum DC current gain (hFE) of 270 at IC = 2.0 mA and VCE = 5.0 V, with a maximum value of 800. Electrical characteristics include a collector-base breakdown voltage of 30 V and an emitter-base breakdown voltage of 5.0 V. Thermal performance specifies a total power dissipation of 225 mW at 25°C on an FR-5 board, with a junction-to-ambient thermal resistance of 556 °C/W. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix 'LT3G' corresponds to the 10,000-unit tape and reel packaging format. Confirm that the device marking code '1L' matches the intended revision. Ensure compliance with automotive PPAP requirements if the application demands unique site control changes associated with the NSV prefix variants.
Select this component when a high DC current gain is required for low-current signal amplification. The 30 V collector-emitter voltage rating suits low-voltage logic interfaces. Verify that the 100 mA continuous current limit meets load requirements. Consider the SOT-23 footprint constraints during PCB layout planning.
This part belongs to the BC846ALT1G series, which includes variants with different voltage ratings such as the BC846 (65 V), BC847 (45 V), and BC849/BC850 (30 V). The 'C' suffix denotes the highest gain bin within the series. All members share identical pinouts and physical dimensions but differ in breakdown voltage thresholds and gain ranges.
Direct substitutes within the same family include BC848ALT3G and BC848BLT3G, provided their respective gain bins are acceptable. Cross-manufacturer equivalents like Nexperia BC848C or Panasonic 2SC4081 may be considered after verifying pinout compatibility and absolute maximum ratings.