BC848CMTF

$0.17

Description：TRANS NPN 30V 0.1A SOT-23-3
Series：-

SKU:03fa23c908fa Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 30V 0.1A SOT-23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：30 V
Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
Power - Max：310 mW
Frequency - Transition：300MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3
Grade：-
Qualification：-

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BC848CMTF

Overview

The BC848CMTF is an NPN epitaxial silicon transistor from the BC846/BC847/BC848/BC850 series, manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 30 V and a maximum DC collector current (IC) of 100 mA. The device operates within a junction temperature range of -65 °C to +150 °C and dissipates up to 310 mW. The 'C' suffix indicates a DC current gain (hFE) classification of 420 to 800 at IC = 2 mA and VCE = 5 V. It utilizes a SOT-23 surface-mount package with tape and reel packing.

Feature Summary

NPN epitaxial silicon planar design suitable for switching and amplifier applications
High DC current gain classification ensuring consistent amplification performance
Low noise characteristics optimized for signal processing tasks
Compatible with automatic insertion processes in thick and thin-film circuits

Applications

General purpose amplifier circuits
Electronic switching applications
Thick and thin-film circuit integration

Procurement Notes

Verify the specific ordering suffixes to confirm the exact hFE binning and packaging configuration required for your design. Ensure that the procurement documentation explicitly references the BC848CMTF part number to distinguish it from other variants within the broader BC846 through BC850 family. Confirm compliance with relevant environmental standards as specified in the manufacturer's datasheet before finalizing orders.

Selection Notes

Select this component when a high-gain NPN transistor with a 30 V collector-emitter rating is required. The 'C' designation provides a guaranteed minimum hFE of 420, making it suitable for precision amplification where lower gain variants may be insufficient. Consider the thermal resistance and power dissipation limits relative to the expected operating conditions and PCB layout constraints.

Part Context

This component belongs to the BC846/BC847/BC848/BC850 series of NPN epitaxial silicon transistors produced by onsemi. These devices are designed as general-purpose small-signal transistors intended for use in various electronic circuits requiring reliable switching or amplification capabilities in a compact surface-mount form factor.

Replacement Considerations

Direct substitutes include BC848BMTF and BC848AMTF, which share the same package but differ in hFE gain classifications. Cross-family replacements like BC847CMTF offer higher voltage ratings but require verification of pinout compatibility and electrical parameter alignment.

FAQ

What does the 'C' suffix indicate in the BC848CMTF part number?

The 'C' suffix denotes the DC current gain (hFE) classification, specifying a range of 420 to 800 under standard test conditions.

Is the BC848CMTF suitable for low-noise applications?

Yes, the datasheet lists low noise as a feature, although the BC850 variant is specifically highlighted for superior low-noise performance within the series.