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The BC848CWE6327BTSA1 is a single NPN silicon small-signal bipolar junction transistor manufactured by Infineon Technologies. It is housed in a surface-mount SOT-323 (SC-70) package with three terminals. The device supports a maximum continuous DC collector current of 100 mA and a peak collector current of 200 mA. Key voltage ratings include a collector-emitter breakdown voltage (VCEO) of 30 V, a collector-base voltage (VCBO) of 30 V, and an emitter-base voltage (VEBO) of 6 V. The component features a power dissipation capability of 330 mW and a transition frequency (fT) of 250 MHz. It operates within a temperature range of -65 °C to +150 °C.
Verify the complete part number including the suffix BTSA1 to ensure correct reel packaging and binning specifications. Confirm RoHS compliance status through official Infineon documentation prior to integration. Check for obsolescence notices as distribution channels may vary. Ensure storage conditions meet moisture sensitivity level requirements for lead-free components.
Select this component when high current gain is required for low-level signal processing. The SOT-323 package offers a smaller footprint compared to standard SOT-23 variants. Verify that the 30 V voltage rating aligns with the circuit's maximum operating conditions. Consider the thermal management requirements given the 330 mW power dissipation limit in enclosed designs.
This part belongs to the BC848 series of NPN transistors produced by Infineon Technologies. The series is widely used in general-purpose electronic applications requiring reliable small-signal handling. The WE6327 suffix indicates specific manufacturing lot and tape-and-reel packaging details defined by the manufacturer.
Compatible substitutes include BC848CW and BC848C variants from other manufacturers provided they match the SOT-323 package and electrical characteristics. Verify pinout compatibility and thermal resistance values before substitution.