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The Diotec Semiconductor BC849A is a small-signal NPN bipolar junction transistor (BJT) designed for surface-mount applications. It features a maximum collector-emitter voltage (VCEO) of 45 V and a collector-base voltage (VCBO) of 50 V. The device supports a continuous DC collector current (IC) of 100 mA with a peak current rating of 200 mA. Power dissipation is rated at 300 mW for industrial grades and 200 mW for commercial grades, operating within a temperature range of -55°C to +150°C. The component utilizes an SOT-23 package.
Verify the specific suffix against the datasheet to confirm the correct grade. The absence of a suffix indicates Industrial grade, while -C denotes Commercial grade. Ensure that -Q or -AQ suffixes are present if automotive compliance is required. Confirm RoHS compliance status and REACH registration details prior to finalizing procurement specifications.
Select based on the required DC current gain group (hFE), as options include Group A, B, and C. Consider thermal resistance limits when designing for high ambient temperatures. Verify package compatibility with the SOT-23 footprint. Check for AEC-Q101 requirements if the application involves automotive environments.
This component belongs to the BC846 through BC850 series of SMD general-purpose NPN transistors manufactured by Diotec Semiconductor. The series provides standardized performance across various voltage ratings and gain configurations, supporting diverse electronic design needs from consumer electronics to industrial systems.
BC849B/-AQ
The maximum collector-emitter voltage (VCEO) is 45 V.
Yes, versions with the -Q or -AQ suffix are AEC-Q101 compliant or qualified.
The BC849A is housed in an SOT-23 surface-mount package.