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Product Detailed Parameters
- Description：TRANS NPN 30V 0.1A SOT-323
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：110 @ 2mA, 5V
- Power - Max：200 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SOT-323
- Grade：-
- Qualification：-
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Overview
The BC849AW RFG is an NPN general-purpose bipolar junction transistor manufactured by Taiwan Semiconductor Corporation. It features a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device operates within a junction temperature range of -55°C to +150°C with a maximum power dissipation of 200 mW. It utilizes the SOT-323 surface-mount package and offers a transition frequency of 100 MHz. The component complies with RoHS 3 standards and exhibits a minimum DC current gain of 420 at specified test conditions.
Feature Summary
- NPN epitaxial silicon planar design for general-purpose amplification
- Halogen-free green molding compound construction
- AEC-Q101 qualified for automotive reliability requirements
Applications
- General purpose amplifier circuits
- Switching applications in consumer electronics
- Automotive electronic systems requiring AEC-Q101 compliance
Procurement Notes
Verify the specific suffix RFG against official Taiwan Semiconductor documentation to confirm packaging configuration and marking details. Ensure compatibility with SOT-323 footprint requirements during PCB layout. Confirm RoHS 3 and REACH regulatory status matches project specifications before finalizing procurement orders.
Selection Notes
Select this component when a 45 V breakdown voltage is required instead of lower-voltage alternatives like the BC846 or BC847 series. The high hFE range suits low-current amplification tasks. Verify thermal management capabilities for the 200 mW dissipation limit in enclosed designs compared to higher-power packages.
Part Context
This part belongs to the BC846–BC850 family of small-signal NPN transistors. The AW suffix typically denotes specific binning or voltage characteristics within the series, distinguishing it from BW or CW variants which may offer different voltage ratings or gain ranges while sharing similar physical dimensions.
Replacement Considerations
Cross-reference with NSVBC849BWT1G or Diotec BC849CW for pin-compatible alternatives. Verify that substitute parts meet the 45 V collector-emitter voltage requirement and maintain equivalent SOT-323 mechanical dimensions for direct board replacement.
