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Product Detailed Parameters
- Description：TRANS NPN 30V 0.1A PG-SOT23
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：330 mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
- Grade：-
- Qualification：-
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Overview
The BC849BE6327HTSA1 is a PNP silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in an SOT-23-3 surface-mount package and operates with a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device features a DC current gain range from 220 to 475, a transition frequency of 250 MHz, and a power dissipation capacity of 330 mW. It supports an operating temperature range from -65 °C to +150 °C and holds AEC-Q100 qualification for automotive applications.
Feature Summary
- Automotive-grade reliability certified under the AEC-Q100 standard
- High DC current gain ranging from 220 to 475 for efficient signal amplification
- Wide thermal operating range extending up to 150 °C junction temperature
Applications
- Automotive electronic circuits requiring qualified discrete components
- General-purpose switching and amplification tasks
- Low-voltage analog signal processing
Procurement Notes
Verify component authenticity through authorized distribution channels due to obsolete status indicators in some sources. Confirm specific binning grades for current gain requirements as specifications may vary within the stated range. Ensure compatibility with existing PCB footprints for the SOT-23-3 package before finalizing procurement decisions.
Selection Notes
Select this component when high current gain and automotive qualification are required in a compact SOT-23-3 form factor. Consider the 45 V voltage rating and 100 mA current limit for circuit design constraints. Evaluate thermal management needs given the 330 mW power dissipation capability in small packages.
Part Context
This part belongs to the BC849 series of PNP transistors designed for general-purpose use. It shares the SOT-23-3 footprint common across many low-power BJT families. The E6327 suffix typically denotes specific tape-and-reel packaging configurations used in automated assembly processes.
Replacement Considerations
Publicly confirmed substitute part numbers were not identified in the provided source material. Verify pinout compatibility and electrical parameter overlaps with potential alternatives from other manufacturers before substitution.
