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The BC849BLT3G is a general-purpose NPN silicon transistor from the BC846ALT1G series, manufactured by onsemi. It operates with a collector-emitter voltage of 30 V and a continuous collector current of 100 mA. The device features a DC current gain (hFE) ranging from 200 to 450 at IC = 2.0 mA and VCE = 5.0 V. Electrical characteristics include a collector-base breakdown voltage of 30 V, an emitter-base breakdown voltage of 5.0 V, and a transition frequency (fT) of 100 MHz. Thermal ratings specify a total power dissipation of 225 mW in a SOT-23 package.
Verify the specific suffix 'BL' corresponds to the required hFE binning range of 200 to 450. Confirm the 'T3G' designation indicates the standard tape and reel packaging format. Ensure the component meets Pb-Free and RoHS compliance requirements for the intended assembly process. Cross-reference the marking code '2B' to validate authenticity against official datasheet documentation.
Select this component when a 30 V collector-emitter rating is sufficient for the circuit design. The BC849 variant offers lower voltage tolerance compared to the BC847 or BC846 series. Verify that the 100 mA maximum collector current aligns with load requirements. Consider the SOT-23 thermal resistance limits if operating near maximum power dissipation thresholds.
This part belongs to the BC846ALT1G family of single NPN transistors. It shares the same SOT-23 physical footprint as other members like the BC847BLT3G but differs in voltage ratings. The 'B' suffix denotes a specific gain binning category within the broader product line. This configuration supports surface-mount technology integration for compact electronic designs.
BC849BLT1G serves as a cut-tape alternative offering identical electrical specifications and pinout compatibility.