BC849BLT3G

BC849BLT3G

$0.02
  • Description:TRANS NPN 30V 0.1A SOT23-3
  • Series:-

SKU:3cebe8819c69 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 30V 0.1A SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:300 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Grade:-
  • Qualification:-

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BC849BLT3G

Overview

The BC849BLT3G is a general-purpose NPN silicon transistor from the BC846ALT1G series, manufactured by onsemi. It operates with a collector-emitter voltage of 30 V and a continuous collector current of 100 mA. The device features a DC current gain (hFE) ranging from 200 to 450 at IC = 2.0 mA and VCE = 5.0 V. Electrical characteristics include a collector-base breakdown voltage of 30 V, an emitter-base breakdown voltage of 5.0 V, and a transition frequency (fT) of 100 MHz. Thermal ratings specify a total power dissipation of 225 mW in a SOT-23 package.

Feature Summary

  • Provides high DC current gain suitable for linear amplification and switching applications
  • Features robust electrostatic discharge protection exceeding 4000 V via Human Body Model standards
  • Constructed using lead-free, halogen-free, and BFR-free materials compliant with RoHS directives

Applications

  • General purpose signal amplification
  • Electronic switching circuits
  • Polarity reversal protection

Procurement Notes

Verify the specific suffix 'BL' corresponds to the required hFE binning range of 200 to 450. Confirm the 'T3G' designation indicates the standard tape and reel packaging format. Ensure the component meets Pb-Free and RoHS compliance requirements for the intended assembly process. Cross-reference the marking code '2B' to validate authenticity against official datasheet documentation.

Selection Notes

Select this component when a 30 V collector-emitter rating is sufficient for the circuit design. The BC849 variant offers lower voltage tolerance compared to the BC847 or BC846 series. Verify that the 100 mA maximum collector current aligns with load requirements. Consider the SOT-23 thermal resistance limits if operating near maximum power dissipation thresholds.

Part Context

This part belongs to the BC846ALT1G family of single NPN transistors. It shares the same SOT-23 physical footprint as other members like the BC847BLT3G but differs in voltage ratings. The 'B' suffix denotes a specific gain binning category within the broader product line. This configuration supports surface-mount technology integration for compact electronic designs.

Replacement Considerations

BC849BLT1G serves as a cut-tape alternative offering identical electrical specifications and pinout compatibility.

BC849BLT3GBC849BLT3G
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