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The BC849CE6327HTSA1 is a single NPN silicon bipolar junction transistor manufactured by Infineon Technologies. It is housed in an SOT-363-6 surface-mount package and designed for general-purpose switching and amplification applications. The device supports a maximum collector-emitter voltage of 30 V and a continuous collector current of 100 mA, with a power dissipation rating of 330 mW. It features a transition frequency of 250 MHz and operates within a temperature range of -65 °C to +150 °C.
Verify the specific suffix E6327HTSA1 against official Infineon documentation to confirm tape-and-reel packaging and automotive grade status. Ensure the component matches the required SOT-363 footprint and pinout configuration for your PCB layout. Cross-reference the datasheet revision date to validate parameter consistency before finalizing procurement orders.
Select this component when a small-form-factor NPN transistor with high gain and moderate voltage ratings is required. It serves as a direct replacement for standard BC849 variants in space-constrained designs. Consider its thermal characteristics and saturation voltage limits when designing low-power amplifier stages or logic interface circuits.
This part belongs to the BC849 series of small-signal transistors from Infineon. These components are widely utilized in consumer electronics and automotive systems due to their robustness and standardized packaging. The BC849CE variant specifically denotes the NPN type within this family, offering consistent electrical characteristics for mass production environments.
Public confirmed substitute part numbers: BC849CW H6327.