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The BC849CLT1 is an NPN silicon general-purpose transistor from the BC846ALT1 series, manufactured by onsemi. It features a collector-emitter voltage of 30 V and a continuous collector current of 100 mA. The device offers a minimum DC current gain (hFE) of 420 at 2 mA and 5 V. Its transition frequency is rated at 100 MHz, with a maximum power dissipation of 225 mW on an FR-5 board. Operating junction temperatures range from -55°C to +150°C.
Verify the specific suffix LT1 indicates tape and reel packaging containing 3,000 units per standard shipping configuration. Confirm RoHS compliance status if lead-free requirements are mandatory for the assembly process. Ensure the ordering code matches the exact hFE binning required for the circuit design.
Select this component when a high-gain NPN transistor is needed for low-current applications. The 30 V rating limits its use in higher voltage circuits compared to the BC846 or BC847 variants within the same series. Verify that the 100 mA current limit aligns with the load requirements.
This part belongs to the BC846ALT1 series, which includes complementary PNP transistors like the BC858. The series provides standardized electrical characteristics across multiple gain bins (A, B, C). The BC849 variant specifically targets lower voltage applications compared to the 45 V or 65 V options available in the broader family.
The device marking code is '2C'.
The noise figure is typically 4.0 dB at 1.0 kHz with a collector current of 0.2 mA.